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| Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1292B HEXFET(R) POWER MOSFET IRFY440CM N-CHANNEL 500 Volt, 0.85 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number IRFY440CM BVDSS 500V RDS(on) 0.85 ID 7.0A Features n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25C I D @ VGS=10V, TC = 100C I DM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ Tstg IRFY440CM Units A W W/K V mJ A mJ V/ns C g Continuous Drain Current 7.0 Continuous Drain Current 4.4 Pulsed Drain Current 28 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage 20 Single Pulse Avalance Energy 510 Avalance Current 7.0 Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt 3.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) To Order Previous Datasheet Index Next Data Sheet IRFY440CM Device Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS BVDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 500 -- -- -- 2.0 4.7 -- -- -- -- 27.3 2.0 11.1 -- -- -- -- -- -- Typ Max Units -- 0.78 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.85 0.95 4.0 -- 25 250 100 -100 68.5 12.5 42.4 21 73 72 51 -- -- V Test Conditions VGS = 0V, ID = 1.0mA V/C Reference to 25C, I D = 1.0mA VGS = 10V, ID = 4.4A VGS = 10V, ID = 7.0A V VDS = VGS, ID = 250A S ( ) VDS 15V, IDS = 4.4A VDS = 0.8 x max. rating,VGS = 0V A VDS = 0.8 x max. rating VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V VGS = 10V, ID = 7.0A nC V DS = Max. Rating x 0.5 see figures 6 and 13 VDD = 250V, ID = 7.0A, RG = 9.1 VGS = 10V ns see figure 10 Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1300 310 120 -- -- -- pF VGS = 0v, VDS = 25V f = 1.0MHz. see figure 5 Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 7.0 28 1.5 700 8.9 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. V ns C Tj = 25C, IS = 7.0A, VGS = 0V Tj = 25C, IF = 7.0A, di/dt 100 A/s VDD 50 V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. Thermal Resistance Parameter RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink Min Typ Max Units -- -- -- -- -- 0.21 1.25 80 -- K/W Test Conditions Typical socket mount Mounting surface flat, smooth To Order Previous Datasheet Index Next Data Sheet IRFY440CM Device Fig. 1 -- Typical Output Characteristics TC = 25C Fig. 2 --Typical Output Characteristics TC = 150C 7A Fig. 3 -- Typical Transfer Characteristics Fig. 4 -- Normalized On-Resistance Vs. Temperature 7A Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet IRFY440CM Device Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage Fig. 8 -- Maximum Safe Operating Area 8 ID , D rai n C u rren t (A m ps ) 6 4 2 0 25 50 75 100 125 A 150 TC , C as e Te m p era tu re (C ) Fig. 9 -- Maximum Drain Current Vs. Case Temperature Fig. 10a -- Switching Time Test Circuit Fig. 10b -- Switching Time Waveforms To Order Previous Datasheet Index Next Data Sheet IRFY440CM Device 10 T h e r m a l R e sp o n se (Z thJC ) 1 D = 0.50 0 .2 0 0 .1 0 0.1 0.05 0.02 0.01 SIN G LE P U LSE (T H ER M A L R ESP ON S E) 0.01 0.00001 A 0.0001 0.001 0.01 0.1 1 t 1 , R e cta n g u la r P u lse D u ra tio n ( se c) Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration V (B R)DSS VD S L D R IVE R tp RG D .U .T IA S tp 0 .0 1 + - VD D A I AS Fig. 12a -- Unclamped Inductive Test Circuit Fig. 12b -- Unclamped Inductive Waveforms Fig. 12c -- Max. Avalanche Energy vs. Current Fig. 13a -- Gate Charge Test Circuit To Order Previous Datasheet Index Notes: Next Data Sheet IRFY440CM Device Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 11). @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 7A, VGS = 10V, 25 RG 200 I SD 7.0A, di/dt 100A/s, VDD BVDSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C Fig. 13b -- Basic Gate Charge Waveform Case Outline and Dimensions Pin 1 - Drain Pin 2 - Source Pin 3 - Gate 3 1 2 TO-257AA NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY440C NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA CAUTION BERYLLIAWARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. To Order |
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